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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTC614TKPT CURRENT 600 mAmpere FEATURE * Small surface mounting type. (SOT-23) * In addition to the features of regular digital transistor. ideal for muting circuits. * These transistors can be used at high current levels,IC=600mA * Internal isolated NPN transistors in one package. * Built in single resistor(R1=10k, Typ. ) .041 (1.05) .033 (0.85) SOT-23 VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors (1) .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) (3) CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. (2) MARKING .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) Emitter Base 1 CIRCUIT 2 .045 (1.15) .033 (0.85) TR R1 3 Collector .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-09 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature CONDITIONS 20 20 12 600 Tamb 25 OC, Note 1 200 VALUE V V V UNIT mA mW O O -55 +150 -55 +150 C C RATING CHARACTERISTIC ( CHDTC614TKPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT RON PARAMETER Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage CONDITIONS IC=50uA IE=50uA VCB=20V VEB=12V IC/IB=50mA/2.5mA IC=50mA; VCE=5.0V IE=-50mA, VCE=10.0V f=100MHz MIN. 20 20 12 - - - 820 7 - - - - - - TYP. - - - MAX. V V V UNIT Collector-emitter breakdown voltage IC=1.0mA 0.5 0.5 150 2700 13 - - uA uA mV K MHz 40 - 10 150 0.9 DC current gain Input resistor Transition frequency Output "ON" resistance VI=5V,RL=1K ,f=1KHZ - Note 1.Pulse test: tp300uS; 0.02. RATING CHARACTERISTIC CURVES ( CHDTC614TKPT ) Typical Electrical Characteristics 10000 Ta=100C Ta=25C Ta= -40C VCE=5V 10000 IC / IB=20 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) DC CURRENT GAIN : hFE 1000 1000 100 Ta=100C Ta=25C Ta= -40C 10 100 0.1 1 10 100 1000 1 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 DC Current Gain vs. Collector Current 1000 Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current ON RESISTANCE : Ron () 100 Ta=25C f=1kHz RL=1k hFE=250 (5V / 50mA) 10 1 0.1 0.1 1 10 100 INPUT VOLTAGE : VI (V) Fig.3 "ON" resistance vs. Input Voltage |
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